MOBICON-REMOTE ELECTRONIC SDN BHD
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Taman Sri Manja,
46000 Petaling Jaya,
Selangor, Malaysia.
+603-7783 2257
+603-7783 4316

VISHAY - IRFBE30PBF TO-220AB TRANSISTOR

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VISHAY - IRFBE30PBF TO-220AB TRANSISTOR Vishay
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Specifications  
   
Attribute Value
Channel Type N
Maximum Continuous Drain Current 4.1 A
Maximum Drain Source Voltage 800 V
Package Type TO-220AB
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 3 Ω
Channel Mode Enhancement
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 125 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Typical Gate Charge @ Vgs 78 nC @ 10 V
Length 10.41mm
Transistor Material Si
Height 9.01mm
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -55 °C
Width 4.7mm

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